| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device for improving light extraction efficiency. <P>SOLUTION: The nitride semiconductor light-emitting device comprises: a nitride semiconductor layer in structure where an MQW active layer 103 is laminated between an n-type semiconductor layer and a p-type semiconductor layer; an n electrode 112 formed on the lower surface of an n-type contact layer 101 in the nitride semiconductor layer; an insulating film 107 formed at an opposing region that opposes a region where the n electrode 112 on the lower surface of the n-type contact layer 101 is formed on the upper surface of a p-type contact layer 105 in the nitride semiconductor layer; and a transparent electrode 106 as a p electrode formed at a region where the insulation film 107 is not formed on the upper surface of the p-type contact layer 105. <P>COPYRIGHT: (C)2007,JPO&INPIT |
