发明名称 Organic thin film transistor
摘要 A thin film transistor comprising at least three terminals consisting of a gate electrode, a source electrode and a drain electrode; an insulator layer and an organic semiconductor layer on a substrate, which controls its electric current flowing between the source and the drain by applying a electric voltage across the gate electrode, wherein the organic semiconductor layer comprises a styryl derivative having a styryl structure expressed by C<SUB>6</SUB>H<SUB>5</SUB>-CH-CH-C<SUB>6</SUB>H<SUB>5</SUB>, or a distyryl structure expressed by C<SUB>6</SUB>H<SUB>5</SUB>-CH-CH-C<SUB>6</SUB>H<SUB>5</SUB>-CH-CH-C<SUB>6</SUB>H<SUB>5 </SUB>each without molecular weight distribution. The transistor has a fast response speed (driving speed), and further, achieves a large On/Off ratio getting an enhanced performance as a transistor.
申请公布号 US2007187674(A1) 申请公布日期 2007.08.16
申请号 US20060369862 申请日期 2006.03.08
申请人 KYUSYU UNIVERSITY 发明人 NAKAMURA HIROAKI;SAITOU MASATOSHI;TSUTSUI TETSUO;YASUDA TAKESHI
分类号 H01L29/08;H01L35/24;H01L51/00 主分类号 H01L29/08
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