| 发明名称 |
LIGHT EMITTING DIODES (LEDS) WITH IMPROVED LIGHT EXTRACTION BY ROUGHENING |
| 摘要 |
Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
|
| 申请公布号 |
US2007190676(A1) |
申请公布日期 |
2007.08.16 |
| 申请号 |
US20070690443 |
申请日期 |
2007.03.23 |
| 申请人 |
CHU CHEN-FU;CHENG HAO-CHUN;FAN FENG-HSU;LIU WEN-HUANG;CHENG CHAO-CHEN |
发明人 |
CHU CHEN-FU;CHENG HAO-CHUN;FAN FENG-HSU;LIU WEN-HUANG;CHENG CHAO-CHEN |
| 分类号 |
H01L21/00;H01L33/08;H01L33/22 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
