| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor light-emitting device that can improve light extraction efficiency, can remove damage in an active layer generated when forming a chip separation groove, and does not make complex a manufacturing process and does not extend time. <P>SOLUTION: An n-type nitride semiconductor layer 2 and a p-type nitride semiconductor layer 4 are formed while sandwiching the active layer 3 in a double hetero structure. In the active layer 3, the width of the n-type nitride semiconductor layer 2 is not aligned to that of the p-type nitride semiconductor layer 4, and the active layer 3 has been scraped off slightly. In a process for forming a separation groove for separating into chips by dry etching and then surface-roughening a surface where the n-type nitride semiconductor layer 2 is exposed, the side of the active layer 3 is melted and the width is narrowed. By the dissolution of the side of the active layer 3, damage by dry etching is removed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
