| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an electro-optical device, which is capable of preventing the occurrence of an insufficient withstand voltage or capacity unevenness of holding capacities from being caused by remaining of etching residuals or roughness of surfaces though dry etching is used when forming the holding capacities provided with thin dielectric layers, and to provide the electro-optical device. SOLUTION: When a holding capacity of a liquid crystal device is constituted, a silicon nitride film 4a constituting a lower layer side of a gate insulating layer 4 is formed, and then the silicon nitride film 4a in a part overlapping a lower electrode 3c is removed by dry etching. Next, wet etching is performed as postprocessing of the dry etching to remove etching residuals of the dry etching and roughness of a surface. Then, a silicon nitride film 4b constituting an upper layer side of the gate insulating film 4 is formed, and thus the holding capacity having a thin dielectric layer 4c is formed. COPYRIGHT: (C)2007,JPO&INPIT |
