| 摘要 |
PROBLEM TO BE SOLVED: To solve such a problem that GaInNAs and GaInAs quantum well layers are degraded due to the segregation of In, and to provide a GaInNAs semiconductor laser with high performance by forming a high-quality quantum well active layer. SOLUTION: An intermediate layer made of Ga(N)AsSb is introduced into an interface between a GaInNAs or GaInAs well layer and an upper barrier layer. The atomic radius of Sb and In are approximate to each other, so that the diffusion of In segregated in the upper interface is reduced in the barrier layer and the quality of the interface can be improved. COPYRIGHT: (C)2007,JPO&INPIT
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