Plasma processing apparatus

摘要

The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1 , means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1 , an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5 A, wherein at least two kinds of processing gases having different composition ratios of 0₂ or N₂are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.