发明名称 |
Dry etching method, fine structure formation method, mold and mold fabrication method |
摘要 |
A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom, a gas including a nitrogen atom and a gas including a hydrocarbon molecule.
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申请公布号 |
US2007187362(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
US20060475190 |
申请日期 |
2006.06.27 |
申请人 |
NAKAGAWA HIDEO;SASAGO MASARU;MURAKAMI TOMOYASU |
发明人 |
NAKAGAWA HIDEO;SASAGO MASARU;MURAKAMI TOMOYASU |
分类号 |
C03C25/68;C23F1/00 |
主分类号 |
C03C25/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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