发明名称 Dry etching method, fine structure formation method, mold and mold fabrication method
摘要 A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom, a gas including a nitrogen atom and a gas including a hydrocarbon molecule.
申请公布号 US2007187362(A1) 申请公布日期 2007.08.16
申请号 US20060475190 申请日期 2006.06.27
申请人 NAKAGAWA HIDEO;SASAGO MASARU;MURAKAMI TOMOYASU 发明人 NAKAGAWA HIDEO;SASAGO MASARU;MURAKAMI TOMOYASU
分类号 C03C25/68;C23F1/00 主分类号 C03C25/68
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