| 摘要 |
Materials and methods are provided for forming single crystal diamond growth using microwave plasma chemical vapor deposition (CVD) process in partial vacuum with a gaseous mixture containing a methane/ hydrogen mixture with optional nitrogen, oxygen and xenon addition. The single crystal substrate can be formed by a modified directional solidification process starting with at least one of the following: pure nickel or a nickel alloy which includes cobalt, iron, or a combination thereof using a vacuum induction melting process. A surface of the single crystal substrate is coated using an electron beam evaporation device with pure iridium or an alloy of iridium and a component selected from the group consisting of iron, cobalt, nickel, molybdenum, rhenium and a combination thereof. The alloy coated single crystal substrate is positioned in a microwave plasma CVD reactor and upon being subjected to a biased enhanced nucleation treatment in the presence of a gaseous mixture of methane, hydrogen, and other optional gases with a biased voltage of negative 100 to 400 volts supports the growth of a large single crystal diamond on it's coated surface. |
