| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other lithography processes of photo-application and a pattern forming method using the same, which are a positive resist composition improved in sensitivity, resolution, pattern profile, in-plane uniformity of line width, development defects and dissolution contrast at the same time and a pattern forming method using the same. <P>SOLUTION: The positive resist composition contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and (B) a resin of which the solubility in an alkali developer increases under the action of an acid, wherein (B) the resin of which the solubility in an alkali developer increases under the action of an acid has a repeating unit derived from a monomer of a specific structure. The pattern forming method using the same is also provided. <P>COPYRIGHT: (C)2007,JPO&INPIT |
