| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing method capable of polishing at a high polishing speed and with reduced dishing, even in conditions that a contact pressure between a surface to be polished of a wafer and a polishing pad and the rotational speed of a polishing table are low in polishing the wafer. <P>SOLUTION: In the polishing method, the surface to be polished is polished in the conditions that the contact pressure of the surface to be polished of the wafer and the polishing pad is 4,000-12,000 Pa and the rotational speed of the polishing table is 50-150 rpm while supplying a polishing solution for metal containing an organic acid containing: (a) at least one kind of heterocyclic compound selected from a group comprising imidazoles, triazoles and tetrazoles, and (b) nitride atoms in the acid solution of a second or third class. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
