| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a super junction structure wherein the cell pitch in the lateral direction can be narrowed while suppressing an increase in resistance of a source electrode. SOLUTION: The thickness (a) of a second insulation film 7 formed on a control electrode 8 in an element 100 is 1/3 or less the thickness (b) of a third insulation film 10 formed on the principal plane side of a semiconductor layer 2, in a terminal 200 which is adjacent to the element 100 wherein the control electrode 8 is formed. COPYRIGHT: (C)2007,JPO&INPIT |
