| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of controlling the height of a gate electrode in a silicidation process. SOLUTION: The method of controlling the height of a gate electrode in a silicidation process includes: a step of piling up a sacrificial cap layer 18 on top of each of one or more gate electrodes 13 to a given height on a semiconductor substrate 10; a step of forming an additional layer 14 of oxide on top of the sacrificial cap layer 18; a step of covering, with a material 17, the semiconductor substrate 10 having the one or more gate electrodes each provided with the sacrificial cap layer 18 on top thereof; a step of performing a planarization process by means of chemical mechanical polishing (CMP); a step of performing a removing process until the sacrificial cap layer 18 on each of the one or more gate electrodes 13 is exposed; and a step of removing the sacrificial cap layer 18 from each of the gate electrodes 13 so that each of the gate electrodes 13 will attain a given height. COPYRIGHT: (C)2007,JPO&INPIT |
