发明名称 TERMINAL LAND FRAME AND ITS MANUFACTURING METHOD, AND RESIN SEALED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a means which can realize a small and thin resin-sealed type semiconductor device with good productivity, when a semiconductor element is highly integrated, and has multiple pins, even when the number of inner lead portions is large. SOLUTION: A terminal land frame, comprising a plurality of land structures 12 so formed as to protrude above a frame main body 10, is connected to the frame main body 10 with a thin part 11, with a groove part 13 provided on the upper surface of the land structure body 12, while a protruding part 14 is formed on the lower surface. In the land structure body 12, the thin part 11 is broken and separated under the pressing force in the protruding direction from the frame main body 10. Thus, the reliability in resin sealing is provided at configuration of a semiconductor device, efficiently providing a small resin-sealed type semiconductor device where land electrodes are arrayed on the bottom surface. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007208278(A) 申请公布日期 2007.08.16
申请号 JP20070064775 申请日期 2007.03.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMAGUCHI YUKIO;NANO MASANORI;ADACHI OSAMU;NOMURA TORU
分类号 H01L23/12;H01L23/50 主分类号 H01L23/12
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