| 摘要 |
PROBLEM TO BE SOLVED: To provide a deforming Si substrate with a sufficiently reduced defect and high quality. SOLUTION: A manufacturing method of a semiconductor substrate includes a step of varying stress to a hetero-epitaxial layer to change the deformation of a Si layer on a support substrate at least containing a structure including the hetero-epitaxial layer with a different grating constant from that of the support substrate, a porous layer and the Si layer sequentially laminated. COPYRIGHT: (C)2007,JPO&INPIT
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