| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, along with a manufacturing method and device thereof, comprising an element separation film with no void even for an element separation groove of any aspect ratio. SOLUTION: After film-forming SiO<SB>2</SB>by about 1/8 of groove width in the element separation groove by a thermal CVD method, an energy is applied obliquely from above to contract an SiO<SB>2</SB>film. Since only the film at the upper part of the groove is applied with energy by oblique application, the SiO<SB>2</SB>film at the upper part of the groove contracts more than at the lower part of the groove. So, the aspect ratio of the groove is relaxed to expand an opening. By repeating the film-forming/contraction process by several times, an element separation film with no void can be manufactured. COPYRIGHT: (C)2007,JPO&INPIT
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