发明名称 |
Method for making an integrated circuit having an embedded non-volatile memory |
摘要 |
A method for forming a portion of a semiconductor device includes: patterning gate stack layers overlying a substrate into a gate stack; implanting dopant ions to form shallow source/drain extension implant regions in the substrate adjacent to the gate stack; oxidizing the gate stack at first oxidation conditions to form an oxidation layer on sidewalls of the gate stack; and oxidizing the gate stack at second oxidation conditions to form further oxidation of the oxidation layer on sidewalls of the gate stack. The second oxidation conditions are different from the first oxidation conditions.
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申请公布号 |
US2007190720(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
US20060355822 |
申请日期 |
2006.02.16 |
申请人 |
LI CHI-NAN B;HONG CHEONG M |
发明人 |
LI CHI-NAN B.;HONG CHEONG M. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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