| 摘要 |
A low-k dielectric layer having a composition of silicon, oxygen and carbon, and optionally hydrogen, is removed from a test or production wafer to refresh the wafer. The low-k dielectric layer is removed by immersing a surface of the low-k dielectric layer in a first etching solution having a first composition that is believed to break the Si-O bonds in the dielectric layer; and immersing the surface of the low-k dielectric layer in a second etching solution having a second composition that is believed to break the Si-C bonds in the low-k dielectric layer.
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