发明名称 |
Manufacturing method for an integrated semiconductor structure and corresponding integrated semiconductor structure |
摘要 |
An integrated semiconductor structure includes an n-channel transistor at a surface of a semiconductor body. The n-channel transistor includes a polysilicon gate overlying a first gate dielectric. A p-channel transistor is also formed at the surface of the semiconductor body. The p-channel transistor includes an n-doped polysilicon gate overlying a second gate dielectric. The second gate dielectric includes an aluminum oxide layer between an underlying dielectric layer and the n-doped polysilicon gate.
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申请公布号 |
US2007187774(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
US20070784637 |
申请日期 |
2007.04.09 |
申请人 |
GOLDBACH MATTHIAS;WU DONGPING |
发明人 |
GOLDBACH MATTHIAS;WU DONGPING |
分类号 |
H01L29/94 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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