发明名称 |
Semiconductor device having a trench gate and method of fabricating the same |
摘要 |
A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is etched to form a trench having a sidewall and a bottom using the trench etch mask as a shield. Impurities are doped into the semiconductor substrate through the trench to form a doped region. The semiconductor substrate underlying the trench is etched to form an extended portion. A gate insulating layer is formed on the trench and the extended portion. A trench gate is formed in the trench and the extended portion.
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申请公布号 |
US2007190712(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
US20060521639 |
申请日期 |
2006.09.14 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
LIN SHIAN-JYH;CHENG CHIEN-LI;LEE CHUNG-YUAN;LIN JENG-PING;LEE PEI-ING |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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