| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for selectively and highly crystallizing a prescribed region in a non-single crystal semiconductor film without going through a complex process. SOLUTION: The following processes are executed successively, namely a process (A) for executing laser annealing to a first region A1 separated from a prescribed region A4 in the non-single crystal semiconductor film 20, while maintaining a melting zone width at nearly the same width; a process (B) for executing laser annealing to a second region A2 adjacent to the side of the prescribed region A4 in the first region A1 in the non-single crystal semiconductor film 20, so that the melting zone width becomes narrower in stepwise or continuously from the melting zone width in the process (A); a process (C) for performing laser annealing to a third region A3 positioned between the second region A2 and the prescribed region A4 in the non-single crystal semiconductor film 20, so that the melting zone width becomes wider stepwise or continuously than the melting zone width when the process (B) is completed; and a process (D) for performing laser annealing to the prescribed region A4 in the non-single crystal semiconductor film 20, while maintaining the melting zone width at nearly the same width as the melting zone width when the process (C) is completed. COPYRIGHT: (C)2007,JPO&INPIT
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