SEMICONDUCTOR DEVICE

摘要

An electron supply layer (13) forms a heterojunction with a channel layer (12) and contains In_zAl_xGa_1-z-xN (0 = z < 1, 0 < x < 1, 0 < x + z < 1). On the electron supply layer (13), a gate electrode (17) is arranged in contact with the electron supply layer (13). The Al composition ratio x₁ at the interface between the electron supply layer (13) and the channel layer (12) and the Al composition ratio x_a at the interface between the electron supply layer (13) and the gate electrode (17) satisfy the following conditions. x₁/2 = x_a < X₁ x₁ = 0.3