| 摘要 |
A magnetoresistance effect element is manufactured in the steps in which a first ferromagnetic layer is formed on a substrate, the first ferromagnetic layer is patterned to form a pinned layer, in shape of strip, having both end portions to which electrode pads are formed, the pinned layer is etched, for example, through ion milling, so as to form at least one nano-contact portion, an insulating layer is formed by embedding an insulating material into the etched pinned layer around the nano-contact portion, a second ferromagnetic layer is formed so as to contact at least the nano-contact portion, and this second ferromagnetic layer is patterned to form a free layer, in shape of strip, having both end portions to which electrode pads are formed.
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