| 摘要 |
<p>A non-volatile semiconductor memory device and its manufacturing method are provided to improve a data writing efficiency at a low voltage by increasing a charge storing characteristic of the non-volatile semiconductor memory device. A non-volatile semiconductor memory device includes semiconductor films(103a,103b), a first insulation film(104), a charge accumulation layer(105), a second insulation layer(107), and a gate electrode layer. The semiconductor films further include a pair of impurity regions and a channel forming region, which is provided between the impurity regions. The first insulation film is formed on the channel forming region. The charge accumulation layer is formed on the first insulation film. The second insulation layer is formed on the charge accumulation layer. The gate electrode layer is formed on the second insulation film. A first energy barrier against the charges in the semiconductor films is formed by the first insulation film. A second energy barrier against the charges in the charge accumulation layer is formed by the first insulation film. The second energy barrier is greater than the first energy barrier.</p> |
