| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing an epitaxial wafer, in which occurrence of surface defects or slipping formed in an epitaxial layer can be reduced. SOLUTION: The method includes, along the following order: a slicing step 11 of slicing a silicon single crystal ingot to obtain a thin disk type wafer; a sheet-fed etching step 12 of rotating a single thin disk type wafer obtained in the slicing step and supplying an etching liquid through a supply nozzle to the surface of the rotating wafer so as to spread the supplied etching liquid over the entire wafer surface to etch; and an epitaxial layer forming step 13 of forming an epitaxial layer consisting of a silicon single crystal on the wafer surface by epitaxial growth. COPYRIGHT: (C)2007,JPO&INPIT
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