METHOD FOR PREPARING A METAL FEATURE SURFACE PRIOR TO ELECTROLESS METAL DEPOSITION

摘要

The invention provides a method for manufacturing an interconnect suitable for a semiconductor device integrated circuit, or the like. The method for manufacturing the interconnect, in one embodiment, includes forming a first metal feature (310) over a substrate, subjecting the first metal feature to a hydrogen containing plasma (410), the hydrogen containing plasma configured to remove organic residue from an exposed surface of the first metal feature, and electroless depositing a second metal feature on the first metal feature having been subjected to the hydrogen containing plasma.