<p>A method for igniting a plasma in a semiconductor process chamber is provided herein. In one embodiment, a method for igniting a plasma in a semiconductor substrate process chamber having an electrically isolated anode, wherein the plasma has failed to ignite upon applying a plasma ignition voltage to a cathode of the process chamber, includes the steps of reducing the magnitude of the voltage applied to the cathode; reapplying the plasma ignition voltage to the cathode; and monitoring the process chamber to determine if the plasma has ignited. The step of monitoring the process chamber may have a duration of a first period of time. The step of reducing the magnitude of the voltage applied to the cathode may have a duration of a second period of time. The steps of reducing the cathode voltage magnitude and reapplying the plasma ignition voltage may be repeated until a plasma ignites.</p>
申请公布号
WO2007092677(A2)
申请公布日期
2007.08.16
申请号
WO2007US60957
申请日期
2007.01.24
申请人
APPLIED MATERIALS, INC.;RITCHIE, ALAN, ALEXANDER;ALLEN, ADOLPH, MILLER