| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a nitride system semiconductor layer is formed on a silicon substrate to suppresses a leak current, and at the same time, to make high-speed operation possible. SOLUTION: The semiconductor device 1 is equipped with a silicon system substrate 2. On the silicon system substrate 2, a nitride system semiconductor layer 3 is formed as composed of nitride system chemical compound. On the nitride system semiconductor layer 3, an anode electrode 4 having a nitride semiconductor layer 3, and a Schottky junction and a cathode electrode 5 ohmicly contacted to the nitride system semiconductor layer 3, are formed. On the lower surface of the silicon system substrate 2, a lower electrode 6 is formed as electrically connected to the anode electrode 4. The lower electrode 6 has the silicon system substrate 2 and the Schottky junction, and is composed of metal or metal alloy having the large work function. COPYRIGHT: (C)2007,JPO&INPIT |
