| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method which can continuously polish a substrate having an insulating film, a barrier metal film and a conductor film with the same polishing solution for metal, can obtain good flatness of a wiring portion and an insulating film convex portion, and can reduce scratches, and to provide a polishing solution for metal used therefor. <P>SOLUTION: The polishing solution for metal is used for chemical mechanical planarization of a workpiece to be polished in semiconductor device manufacture. The polishing solution for metal contains the following components (1), (2), (3) and (4), and is used to continuously polish a wiring made of copper or an alloy containing copper and the barrier metal film with the one kind of polishing solution, i.e. (1) particles obtained by a dynamic light scattering method and having a volume average particle size of 60-150 nm, (2) particles obtained by a dynamic light scattering method and having a volume average particle size of 10-50 nm, (3) an oxidizer and (4) aminotricarboxylic acid. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
