| 摘要 |
PROBLEM TO BE SOLVED: To provide a multivalue phase change memory as a type of a nonvolatile memory. SOLUTION: The memory is provided with a first resistive memory cell, a current source configured to supply an input current indicating a desired resistance value of the first memory cell, and a current mirror that mirrors the input current to supply an output current. This memory is provided with a first switching circuit. The first switching circuit is configured to pass the output current to the first memory cell not at the desired resistance level, and block the output current from the first memory cell in response to the first memory cell achieving the desired resistance level. COPYRIGHT: (C)2007,JPO&INPIT |
