| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an active matrix display device like a liquid crystal display device, which uses insulated-gate field effect thin film transistors TFT as switching elements and has less bright points based on short-circuit between source electrodes and drain electrodes of these TFTs. SOLUTION: The method of manufacturing the active matrix display device includes steps of; forming a photo resist layer 30 having a prescribed pattern on a surface of a metallic layer which has at least a surface layer made of molybdenum and has a multi-layered structure, and then etching this metallic layer; removing the photo resist layer 30 on the surface of the metallic layer by ashing; washing with water; and laminating a passivation layer on the surface including the metallic layer. The step of washing with water is continued for such time or longer that stains like water drops will not occur after this step. COPYRIGHT: (C)2007,JPO&INPIT |
