| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the voltage dependency of a capacitance value and improving a frequency chracteristic of the capacitance value. SOLUTION: The semiconductor device 100 comprises a MOS capacitor 4 for forming capacitance between drain regions 7, 9 and a source region 8 commonly connected and gate electrodes 12, 13; and a wiring capacitor 5 having first comb-shaped wiring 16 having an extension part 16a extending in a comb-shape way, and a second comb-shaped wiring 17 arranged through the first comb-shaped wiring 16 and a line insulating film 21 and having an extension part 17a connected to the drain regions 7, 9 and the source region 8 and extending in the comb-shape way. The 17a of the second comb-shaped wiring 17 and the part 16a of the first comb-shaped wiring 16 are arranged alternately, and arranged vertically to a channel direction for connecting the drain regions 7, 9 and the source region 8 of the MOS capacitor 4. COPYRIGHT: (C)2007,JPO&INPIT |
