| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing method which can prevent the occurrence of surface arching on the substrate to be processed and can improve productivity more than ever before. SOLUTION: Ar gas is fed into a vacuum chamber 1 and under this state, relatively low high frequency power such as 300 W is supplied first from high frequency power supply 11 to a mounting stage 2 (a lower electrode) to generate weak plasma and adjust the conditions of charge accumulated inside a semiconductor wafer W by having the plasma act on a semiconductor wafer W. At this time, direct voltage (HV) to an electrostatic chuck 4 is not applied so that the charges can be easily moved. After that, direct voltage to the electrostatic chuck 4 starts to be applied. Thereafter, high frequency voltage for regular treatment such as 2,000 W is supplied to generate strong plasma for regular plasma treatment. COPYRIGHT: (C)2007,JPO&INPIT
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