| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof capable of optimizing each element of a plurality of TLPMs formed on the same semiconductor substrate with high precision and reducing the manufacturing cost thereof. SOLUTION: The depth of a first trench of NchTLPM is made smaller than the depth of a second trench 12 of PchTLPM in a complementary TLPM, so that the channel length of the NchTLPM is optimized and the ON-state resistance can be made small. Further, the same mask is used to form the first trench and a first n-drain region, and the same mask is used to form the second trench and a first p-drain region, so that photo-processes can be reduced. Accordingly, the cost can be reduced. Moreover, the first n-drain region can be formed with high precision by self-aligning. COPYRIGHT: (C)2007,JPO&INPIT
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