| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon wafer for lowering an interface level between a surface silicon layer of an SOI substrate having an embedded oxide film and the embedded oxide layer, and also to provide a silicon wafer having a lower interface level manufactured by the manufacturing method. SOLUTION: The manufacturing method of the the silicon wafer includes a step of lowering an interface level for lowering the interface level between the embedded oxide film layer 32 and the surface silicon layer 33 by annealing the SOI substrate having the embedded oxide film layer 32 for the period from 3 minutes to 8 hours in a temperature range of 250 to 900°C in an atmosphere formed by at least two or more kinds selected from nitrogen, inert gas, and air. COPYRIGHT: (C)2007,JPO&INPIT
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