| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the collector-emitter current characteristics are enhanced, falling time is shortened, and latch-up resistance of a parasitic thyristor is enhanced. SOLUTION: The semiconductor device comprises a first conductive semiconductor substrate, a second conductive semiconductor region provided on the semiconductor substrate, a first conductive collector layer provided in the semiconductor region, a first conductive endless base layer provided in the semiconductor region to surround the collector layer while spaced apart therefrom, and a second conductive first emitter layer provided in the base layer. The semiconductor device includes a lateral unit semiconductor element for controlling migration of carriers between the first emitter layer and the collector layer in a channel region formed on the base layer. The first emitter layer consists of a plurality of unit emitter layers provided along the base layer. COPYRIGHT: (C)2007,JPO&INPIT
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