| 摘要 |
PROBLEM TO BE SOLVED: To reduce the variation in threshold value of an inverted magnetic field by processing a material layer using a mask. SOLUTION: The manufacturing method of the magnetoresistance effect element comprises processes of: forming the material layer 10a including a fixed layer, recording layer, and non-magnetic layer interposed between the fixed layer and recording layer, on a substrate 101; forming a mask material 102a on the material layer 10a; forming the mask 102 having a desired pattern by processing the mask material 102a by imprint lithography; and forming the magnetoresistance effect element 10 having a desired pattern by processing the material layer 102a using the mask 102. COPYRIGHT: (C)2007,JPO&INPIT
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