发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device according to an example of the present invention includes a first semiconductor region of a first conductivity type, a first MIS transistor of a second conductivity type formed in the first semiconductor region, a second semiconductor region of a second conductivity type, and a second MIS transistor of a first conductivity type formed in the second semiconductor region. A first gate insulating layer of the first MIS transistor is thicker than a second gate insulating layer of the second MIS transistor, and a profile of impurities of the first conductivity type in a channel region of the second MIS transistor has peaks.
申请公布号 US2007187797(A1) 申请公布日期 2007.08.16
申请号 US20070671229 申请日期 2007.02.05
申请人 KATO YOSHIKO;ISHIBASHI SHIGERU;NOGUCHI MITSUHIRO 发明人 KATO YOSHIKO;ISHIBASHI SHIGERU;NOGUCHI MITSUHIRO
分类号 H01L29/00 主分类号 H01L29/00
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