Cleaning method for use in semiconductor device fabrication

摘要

A novel cleaning method for preventing defects and particles resulting from post tungsten etch back or tungsten chemical mechanical polish is provided. The cleaning method comprises providing a stack structure of a semiconductor device including a tungsten plug in a dielectric layer. The tungsten plug has a top excess portion. A surface of the stack structure is then contacted with a cleaning solution comprising hydrogen peroxide. Next, the surface of the stack structure is contacted with dilute hydrofluoric acid. The cleaning solution and hydrofluoric acid are capable of removing the top excess portion and particles on the surface of the stack structure.