发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a high performance, highly functional semiconductor device by having an ultra-high pin count high density multilayer wiring board structure, and a stable power supply structure to a semiconductor chip having a multi-power supply multi-function macro block. SOLUTION: The semiconductor device comprises a semiconductor substrate 31 having a plurality of power supply layer/ground layer/wiring layer where the vertically adjoining layers are insulated through an insulation layer, a semiconductor integrated circuit device 30 provided on the semiconductor substrate 31, and a plurality of capacitors 32 provided on the periphery of the semiconductor integrated circuit device 30 on the semiconductor substrate 31. The semiconductor substrate 31 has a plurality of vias for connection with the plurality of power supply layer/ground layer/wiring layer extending in the vertical direction, and a plurality of core power supplies and core ground pins provided on the semiconductor substrate 31 and connected with the plurality of vias wherein the semiconductor integrated circuit device 30 has overall dimensions arranged to be confined in the region of the plurality of core power supplies and core ground pins of the semiconductor substrate 31. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007207933(A) 申请公布日期 2007.08.16
申请号 JP20060023552 申请日期 2006.01.31
申请人 FUJITSU LTD 发明人 MIYODA AKIRA;NAKAMOTO SHINICHI
分类号 H01L25/00;H01L23/12 主分类号 H01L25/00
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