发明名称 |
Capacitively controlled field effect transistor gas sensor comprising a hydrophobic layer |
摘要 |
The invention relates to a gas sensor comprising a substrate of a first charge carrier type whereon a drain and a source of a second charge carrier type are arranged. A channel area is formed between the drain and the source. The gas sensor also comprises a gas sensitive layer comprising poles between which a gas induced voltage is produced according to the concentration of a gas which is in contact with the layer. In order to measure said voltage, a pole of the gas sensitive layer is capacitatively coupled to the channel area by means of an air gap and the other pole is connected to a counter-electrode having a reference potential. A hydrophobic layer is arranged on the surface of the gas sensor between the gas sensitive layer and the channel area and/or on a sensor electrode which is connected to a gate electrode arranged on the channel area.
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申请公布号 |
US2007189931(A1) |
申请公布日期 |
2007.08.16 |
申请号 |
US20040566412 |
申请日期 |
2004.07.24 |
申请人 |
MICRONAS GMBH |
发明人 |
RUHE JURGEN;SAMUEL J.D. JEYAPRAKASH S.;FRERICHS HEINZ-PETER;LEHMANN MIRKO |
分类号 |
G01N30/96;G01N27/22;G01N27/414 |
主分类号 |
G01N30/96 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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