SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

Over an insulating film (31) having a plug (35) buried therein, there are sequentially formed a second component releasing region (45) made of a first component and a second component, a solid electrolyte region (46) made of a chalcogenide, and an upper electrode region (47). The second component releasing region (45) of the first component and the second component is formed of domed electrode portions (43) and an insulating film (44) burying the peripheries of the electrode portions (43), and at least one electrode portion (43) exists over a plug (34). The electrode portions (43) are formed of a first portion made of the first component such as a tantalum oxide stable even if fed with an electric field, and a second component such as copper or silver diffusible to migrate into a solid electrolyte region (42) when fed with the electric field. Information is stored when the second component fed from the electrode portions (43) migrates in the solid electrolyte region (46).