THE METHOD FOR PREPARATION OF NICKEL OXIDE THIN FILMS AND THE METHOD FOR CRYSTALLIZATION OF AMORPHOUS SILICON THIN FILM USING THE SAME AND THE METHOD FOR MANUFACTURE OF THIN FILM TRANSISTOR USING THE SAME

摘要

A method for crystallizing an amorphous silicon thin film using a method for forming a nickel oxide thin film is provided to form a uniform thin film while adjusting the average thickness of a nickel oxide thin film to a scope of several to several tens of angstroms by using a nickel amino-alkoxide compound as a nickel supply source and by forming a nickel oxide thin film by an ALD method. A nickel supply source is supplied to the upper surface of an amorphous silicon thin film formed on a glass substrate to form a nickel deposition layer. An unreacted nickel supply source and reaction byproducts are removed from the amorphous silicon thin film. An oxygen supply source is supplied to the nickel deposition layer to form a nickel oxide thin film on the amorphous silicon thin film through an oxide reaction(S120). An unreacted oxygen supply source and reaction byproducts are eliminated from the nickel oxide thin film. Each one of the abovementioned processes can be performed in a cycle of 1~50.