发明名称 |
MANUFACTURING METHOD OF SUBSTRATE FOR DISPLAY DEVICE |
摘要 |
<p>A method for fabricating a substrate for a display device is provided to reduce corrosion of a data interconnection in etching a semiconductor layer by forming a data interconnection, a semiconductor layer and a resistive contact layer from a single photoresist layer so that the semiconductor layer is etched after the data interconnection is etched. A gate interconnection(22) is formed on an insulation substrate. A gate insulation layer, a semiconductor layer(42,48) and a resistive contact layer(55) are formed on the gate interconnection. A data metal layer including a copper layer is formed on the resistive contact layer. A photoresist layer is formed which includes first, second and third regions. The first region having a first thickness is formed on the data metal layer. The second region has a second thickness less than the first thickness. The third region has a third thickness less than the second thickness. The data metal layer in the third region is removed by a first etch process. An oxygen plasma treatment is performed on the data metal layer. The semiconductor layer and the resistive contact layer in the third region are eliminated by a second etch process. The data metal layer in the second region is removed by a third etch process. A part of the semiconductor layer and the resistive contact layer in the second region are removed by a fourth etch process.</p> |
申请公布号 |
KR20070081146(A) |
申请公布日期 |
2007.08.16 |
申请号 |
KR20060012810 |
申请日期 |
2006.02.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JE HUN;KIM, DO HYUN;JEONG, CHANG OH;KIM, JOO HAN;BAE, YANG HO |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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