| 摘要 |
PROBLEM TO BE SOLVED: To prevent step-disconnection of a wiring formed on a thin film transistor. SOLUTION: The thin film transistor has a semiconductor layer which is formed on an insulating surface, and includes a source region, a drain region, a channel region, and a low-concentration impurity region formed between the source region and the channel region, and between the drain region and the channel region; a gate insulating film prepared on the semiconductor layer; a gate electrode prepared on the gate insulating film; an oxide of the gate electrode prepared on the surface of the gate electrode; a nitride silicon film which is provided on the side surface of the gate electrode through the oxide of the gate electrode, and prepared so as to be extended from the side surface of the gate electrode to the region overlapping the low-concentration impurity region; and a side wall which is provided on the side surface of the gate electrode through the nitride silicon film and the oxide of the gate electrode, and prepared so as to be overlapped with the low-concentration impurity region through the nitride silicon film. COPYRIGHT: (C)2007,JPO&INPIT |
