发明名称 SURFACE ACOUSTIC WAVE DEVICE AND ELECTRONIC EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a surface acoustic wave device which has excellent frequency temperature characteristics and facilitates a high frequency by providing a single IDT electrode and utilizing an upper limit mode of a stop band as an oscillation frequency of the surface acoustic wave device. SOLUTION: The present invention relates to a surface acoustic wave device which is provided with at least a single IDT electrode for exciting a Rayleigh type surface acoustic waves on the surface of a quartz substrate and excites the upper limit mode of the stop band of the surface acoustic wave, when a cutout angle and a surface acoustic wave propagation direction of the quartz substrate are defined as (ϕ,θ,ψ) in Euler angle expression, setting is made as follows:ϕ=0°, 110°≤θ≤140°, 38°≤¾ψ¾≤44°. When the thickness of the IDT electrode is defined as H, the width of electrode fingers in the IDT electrode is defined as (d), the pitch between electrode fingers in the IDT electrode is defined as P and the wavelength of a surface acoustic wave is defined asλ, on the condition ofη=d/P, setting is made as follows: H/λ≥0.1796η<SP>3</SP>-0.4303η<SP>2</SP>+0.2071η+0.0682. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007208871(A) 申请公布日期 2007.08.16
申请号 JP20060028028 申请日期 2006.02.06
申请人 SEIKO EPSON CORP 发明人 KANNA SHIGEO
分类号 H03H9/25;H03H9/145 主分类号 H03H9/25
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