| 摘要 |
<P>PROBLEM TO BE SOLVED: To propose a manufacturing method of a semiconductor device having small variations in the height of a gate electrode within a substrate surface, and to propose a chemical mechanical polishing method and a chemical mechanical polishing apparatus. <P>SOLUTION: A silicide layer 8 is formed at the upper portion of a gate electrode 4 formed on an element formation region on a semiconductor substrate 1, a protective film 9 is formed so that the entire semiconductor device is covered, the protective film 9 is polished until the silicide layer 8 is exposed at the upper portion of the gate electrode 4, the entire gate electrode 4 is silicified to form a silicide gate electrode, an interlayer insulating film 10 is formed entirely including the upper portion of the silicide gate electrode, and the thickness of the interlayer insulating film 10 is adjusted and the interlayer insulating film 10 is flattened. The amount of polishing is reduced when accessing to the silicide layer on the gate electrode, thus reducing variations in the height of a finishing gate electrode in a substrate surface. <P>COPYRIGHT: (C)2007,JPO&INPIT |
