MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of accurately forming a contact hole reaching gate wiring and a semiconductor substrate.

SOLUTION: The manufacturing method of the semiconductor device provided with an NMOS region 11A and a PMOS region 11B on the same semiconductor substrate 11 comprises: a first process of forming a first stress liner film 41 on the semiconductor substrate 11 of the NMOS region 11A; a second process of forming a second stress liner film 43 on the semiconductor substrate 11 of the PMOS region 11B so as to partially overlap with the first stress liner film 41 on the boundary part 11C of the NMOS region 11A and the PMOS region 11B; and a third process of removing the second stress liner film 43 provided on the first stress liner film 41.

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