| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus for effectively removing an oxide layer and an organic layer. <P>SOLUTION: A third process unit 36 of the substrate treatment apparatus 10 is provided with a casing-type treatment chamber cell (chamber) 50, an oxygen gas supplying system 192, and an antenna device 191. The gas supplying system 192 supplies an oxygen gas into the chamber 50 accommodating a wafer W through an oxygen gas supplying ring 198, and the antenna device 191 introduces a microwave into the chamber 50 to which the oxygen gas is supplied. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
