| 摘要 |
PROBLEM TO BE SOLVED: To reduce large numbers of masking steps used for manufacturing a thin film transistor of an active matrix system liquid crystal display device. SOLUTION: Source and drain electrodes 143a and 143b, a semiconductor layer 139 in which impurities are doped and a semiconductor layer 137 in which the impurities are not doped are patterned in the same step. The source and drain electrodes and the impurity doped semiconductor layer are etched in a single processing step using a protective insulation layer 145 as a mask for the purpose of forming the source and the drain electrodes 143a and 143b. Thereby, a manufacturing cost is lowered and yield is enhanced. COPYRIGHT: (C)2007,JPO&INPIT |
